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Nd:YVO4 –Diode Pumped Solid-state Lasers

Short Description:

Nd:YVO4 is one of the most efficient laser host crystal currently existing for diode laser-pumped solid-state lasers. Nd:YVO4 is an excellent crystal for high power, stable and cost-effective diode pumped solid-state lasers.


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Product Description

Nd:YVO4 can produce powerful and stable IR, green, blue lasers with the design of Nd:YVO4 and frequency doubling crystals. For the applications in which more compact design and the single-longitudinal-mode output are needed, Nd:YVO4 shows its particular advantages over other commonly used laser crystals.

Advantages Of Nd:YVO4

● Low lasing threshold and high slope efficiency
● Large stimulated emission cross-section at lasing wavelength
● High absorption over a wide pumping wavelength bandwidth
● Optically uniaxial and large birefringence emits polarized laser
● Low dependency on pumping wavelength and tend to single mode output

Basic Properties

Atomic Density ~1.37x1020 atoms/cm2
Crystal Structure Zircon Tetragonal, space group D4h, a=b=7.118, c=6.293
Density 4.22 g/cm2
Mohs Hardness Glass-like, 4.6 ~ 5
Thermal Expansion
Coefficient
αa=4.43x10-6/K,αc=11.37x10-6/K
Melting Point 1810 ± 25℃
Lasing Wavelengths 914nm, 1064 nm, 1342 nm
Thermal Optical
Coefficient
dna/dT=8.5x10-6/K, dnc/dT=3.0x10-6/K
Stimulated Emission
Cross-Section
25.0x10-19 cm2 , @1064 nm
Fluorescent
Lifetime
90 ms (about 50 ms for 2 atm% Nd doped)
@ 808 nm
Absorption Coefficient 31.4 cm-1 @ 808 nm
Absorption Length 0.32 mm @ 808 nm
Intrinsic Loss Less 0.1% cm-1 , @1064 nm
Gain Bandwidth 0.96 nm (257 GHz) @ 1064 nm
Polarized Laser
Emission
parallel to optic axis (c-axis)
Diode Pumped
Optical to Optical
Efficiency
> 60%
Sellmeier Equation (for pure YVO4 crystals) no2(λ) =3.77834+0.069736/(λ2 - 0.04724) - 0.0108133λ2
  no2(λ) =4.59905+0.110534/(λ2 - 0.04813) - 0.0122676λ2

Technical Parameters

Nd dopant concentration 0.2 ~ 3 atm%
Dopant tolerance within 10% of concentration
Length  0.02 ~ 20mm
Coating specification AR @ 1064nm, R< 0.1% & HT @ 808nm, T>95%
HR @ 1064nm, R>99.8% & HT@ 808nm, T>9%
HR @ 1064nm, R>99.8%, HR @ 532 nm, R>99% & HT @ 808 nm, T>95%
Orientation a-cut crystalline direction (+/-5℃)
Dimensional tolerance +/-0.1mm(typical), High precision +/-0.005mm can be available upon request.
Wavefront distortion <λ/8 at 633nm
Surface qualit Better than 20/10 Scratch/Dig per MIL-O-1380A
Parallelism < 10 arc seconds

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